DocumentCode :
2163549
Title :
Performance Comparison between capacitively driven low swing and conventional interconnects for CU and carbon nanotube wire technologies
Author :
Koo, Kyung-Hoae ; Kapur, Pawan ; Park, Jeongha ; Noh, Hyun-Woo ; Wong, Simon S. ; Saraswat, Krishna C.
Author_Institution :
Electr. Eng. Dept., Stanford Univ., Stanford, CA
fYear :
2009
fDate :
1-3 June 2009
Firstpage :
23
Lastpage :
25
Abstract :
The on-chip interconnect bottleneck with conventional Cu/low-k and delay optimized repeater scheme presents a compelling reason to explore novel interconnect circuit architectures. The capacitively driven low-swing interconnect (CDLSI) has the potential to affect a significant energy saving and latency reduction. The purpose of this work is two fold: Firstly, to develop an accurate analytical, optimized model for CDLSI wire scheme; Secondly, to quantify and compare the delay and energy expenditure for not only different interconnect circuit schemes, but also various future technologies such as Cu, carbon nanotube and optics. We find that CDLSI circuit scheme outperforms the conventional interconnects in latency and energy per bit for lower bandwidth requirement, while these advantages degrade for higher bandwidth requirements.
Keywords :
carbon nanotubes; copper; integrated circuit interconnections; optical interconnections; wires (electric); C; Cu; Cu wire; capacitively driven low-swing interconnect; carbon nanotube wire; Bandwidth; Capacitance; Carbon nanotubes; Delay; Integrated circuit interconnections; Optical amplifiers; Optical interconnections; Optical transmitters; Voltage; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
Type :
conf
DOI :
10.1109/IITC.2009.5090330
Filename :
5090330
Link To Document :
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