Newly developed electro-chemical polishing process of copper as replacement of CMP suitable for damascene copper inlaid in fragile low-k dielectrics

Author

Sato, S. ; Yasuda, Z. ; Ishihara, M. ; Komai, N. ; Ohtorii, H. ; Yoshio, A. ; Segawa, Y. ; Horikoshi, H. ; Ohoka, Y. ; Tai, K. ; Takahashi, S. ; Nogami, T.

Author_Institution

Adv. Process R & D Labs., Sony Corp., Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

A new principle for the copper removal process, Electro-Chemical-Polishing (ECP), to replace CMP is demonstrated. ECP which leverages electrochemical dissolution of copper has removal rates determined by the imposed current, higher than 8000 A/min, while "planarization" is made by wiping out copper complexes at a wiping pressure ten times lower than that for CMP to form erosion- and scratch-free damascene copper interconnects. ECP is a promising replacement for CMP suitable for copper inlaid in fragile low-k materials.

Keywords

copper; dielectric thin films; electrolytic polishing; integrated circuit interconnections; Cu; Cu removal process; damascene Cu interconnects; dielectric inlaid Cu; electro-chemical polishing process; electrochemical dissolution; fragile low-k dielectrics; planarization; Chemical technology; Copper; Dielectric materials; Etching; Laboratories; Large scale integration; Planarization; Shearing; Slurries; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979413

Filename

979413