Title :
Fabrication of 70-nm-diameter carbon nanotube via interconnects by remote plasma-enhanced chemical vapor deposition and their electrical properties
Author :
Katagiri, Masayuki ; Yamazaki, Yuichi ; Sakuma, Naoshi ; Suzuki, Mariko ; Sakai, Tadashi ; Wada, Makoto ; Nakamura, Naofumi ; Matsunaga, Noriaki ; Sato, Shintaro ; Nihei, Mizuhisa ; Awano, Yuji
Author_Institution :
MIRAI-Selete, Kawasaki
Abstract :
We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-excited remote plasma-enhanced chemical vapor deposition at 450degC. The resistance of a 70-nm-diameter CNT via is 52 Omega, which is the lowest ever reported for CNT via interconnects. The CNT via interconnect has the capability to sustain current density as high as 1times108 A/cm2.
Keywords :
carbon nanotubes; contact resistance; interconnections; nanotechnology; plasma CVD; C; CNT; SiOC interlayer dielectrics; carbon nanotube; current density; remote plasma-enhanced chemical vapor deposition; resistance; resistance 52 ohm; size 70 nm; temperature 450 degC; via interconnect; Carbon nanotubes; Chemical vapor deposition; Fabrication; Plasma applications; Plasma chemistry; Plasma density; Plasma properties; Plasma sources; Plasma temperature; Scanning electron microscopy;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090336
