Title :
Grating-outcoupled surface-emitting semiconductor lasers at 1310 and 1550 nm
Author :
Hilali, Z.A. ; Evans, G.A. ; Kirk, J.B. ; Liu, Z.S. ; Amarasinghe, N.V. ; Phan, D. ; Happawana, G. ; Dinkespiler, B. ; Masood, T. ; Davis, C.
Author_Institution :
Photodigm Inc., Dallas, TX, USA
Abstract :
Demonstration of a concept for a single-frequency, grating-outcoupled surface-emitting semiconductor laser (GSE) is reported at wavelengths of 1310 and 1550 nm with output powers of 2 mW. First-order distributed Bragg reflector (DBR) gratings are used for feedback and a second-order grating provides surface emission. The device has a 6/spl times/10 /spl mu/m outcoupling aperture that approximately matches the spot size of a single mode fiber. This architecture allows probe-testing at the wafer level similar to vertical cavity surface emitting lasers (VCSEL). These initial GSE lasers have demonstrated pulsed threshold currents of 47 mA at 1289 nm and 60 mA at 1550 nm with /spl sim/20 dB side-mode suppression ratios (SMSR).
Keywords :
Bragg gratings; laser feedback; semiconductor lasers; surface emitting lasers; 1289 nm; 1310 nm; 1550 nm; 2 mW; 47 mA; 60 mA; DBR gratings; GSE semiconductor laser; distributed Bragg reflector gratings; feedback; grating-outcoupled surface-emitting semiconductor laser; outcoupling aperture; probe testing; second-order grating; single mode fiber; spot size; surface emission; wafer level; Bragg gratings; Distributed Bragg reflectors; Distributed feedback devices; Fiber lasers; Laser feedback; Laser modes; Semiconductor lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
BroadBand Communications for the Internet Era Symposium digest, 2001 IEEE Emerging Technologies Symposium on
Conference_Location :
Richardson, TX, USA
Print_ISBN :
0-7803-7161-5
DOI :
10.1109/ETS.2001.979419
