DocumentCode
2163880
Title
A new model for thermal channel noise of deep submicron MOSFETs and its application in RF-CMOS design
Author
Knoblinger, G. ; Klein, P. ; Tiebout, M.
Author_Institution
Infineon Technol. AG, Germany
fYear
2000
fDate
15-17 June 2000
Firstpage
150
Lastpage
153
Abstract
In this paper we present a simple analytical model for the thermal channel noise of deep submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a LNA in the GHz range.
Keywords
CMOS integrated circuits; Hot carriers; MOSFET; Semiconductor device models; Semiconductor device noise; Thermal noise; UHF amplifiers; UHF integrated circuits; 1 GHz; 2 GHz; BSIM3v3 SPICE model; LNA; RF-CMOS design; deep submicron MOSFET; hot carrier effect; noise performance; thermal channel noise; Analytical models; CMOS technology; Circuit noise; Electric variables measurement; Electrical resistance measurement; Frequency; Hot carrier effects; MOSFET circuits; Noise figure; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6309-4
Type
conf
DOI
10.1109/VLSIC.2000.852876
Filename
852876
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