Title :
1.25 volt, low cost, embedded flash memory for low density applications
Author :
McPartland, R.J. ; Singh, R.
Author_Institution :
Lucent Technol. Bell Labs., Allentown, PA, USA
Abstract :
A low cost, embedded flash memory cell, with read control-gate voltage as low as 1.25 volts, has been developed. Single cell testers and 4 kbit arrays have been fabricated and characterized. Fabrication requires only a single masking step (thick gate oxide) above that used in high-performance core CMOS logic technologies. Applications include low-density non-volatile memory, control of redundancy in SRAM and DRAM memories, ID or security code registers, and other switch functions.
Keywords :
CMOS memory circuits; Flash memories; Memory architecture; 1.25 V; 4 kbit; 4 kbit arrays; DRAM memories; ID; SRAM memories; fabrication; low cost embedded flash memory; low density applications; low-density nonvolatile memory; read control-gate voltage; redundancy control; security code registers; single cell testers; single masking step; switch functions; thick gate oxide; CMOS logic circuits; CMOS technology; Costs; Flash memory; Flash memory cells; Low voltage; Random access memory; Switches; Testing; Voltage control;
Conference_Titel :
VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6309-4
DOI :
10.1109/VLSIC.2000.852878
