Title :
Characterization of Low-k SiOCH Layers in fine-pitch Cu-damascene interconnects by monoenergetic positron beams
Author :
Uedono, A. ; Inoue, N. ; Hayashi, Y. ; Eguchi, K. ; Nakamura, T. ; Hirose, Y. ; Yoshimaru, M. ; Oshima, N. ; Ohdaira, T. ; Suzuki, R.
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba
Abstract :
Pore characteristics of SiOCH layers in fine-pitch Cu-damascene interconnects were studied using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons were measured for the samples fabricated with the line/space widths of 0.27/0.27 and 1.08/1.08 mum, respectively. From measurements of the positronium (Ps) lifetimes, the mean pore size was estimated. The Ps intensity in SiOCH was found to be decreased by the scaling, which was attributed to the damage introduced during the damascene process.
Keywords :
Doppler broadening; copper; integrated circuit interconnections; low-k dielectric thin films; porosity; positron annihilation; positronium; silicon compounds; Cu; Cu-damascene interconnects; Doppler broadening spectra; Ps intensity; annihilation radiation; distance 0.27 mum; distance 1.08 mum; low-k SiOCH layers; mean pore size was; monoenergetic positron beams; positronium lifetime spectra; Electron emission; Electron traps; Integrated circuit interconnections; Isotopes; Life estimation; Lifetime estimation; Positrons; Scattering parameters; Solids; Space technology;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090344
