A Si BiCMOS trans-impedance amplifier for 10 Gb SONET receiver

Author

Kim, H.H. ; Chandrasekhar, S. ; Burrus, C. ; Bauman, J.

Author_Institution

Lucent Technol. Bell Labs., Holmdel, NJ, USA

fYear

2000

fDate

15-17 June 2000

Firstpage

170

Lastpage

173

Abstract

A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.

Keywords

Amplifiers; BiCMOS digital integrated circuits; Elemental semiconductors; III-V semiconductors; Indium compounds; Integrated optoelectronics; Modules; Optical fiber communication; Optical receivers; SONET; Silicon; p-i-n photodiodes; 0.25 micron; 10 Gb SONET receiver; 10 Gbit/s; 8.5 GHz; BER; InP; InP PIN photodiode; Si; Si BiCMOS trans-impedance amplifier; bit-error-rate; shunt feedback trans-impedance amplifier; Bandwidth; BiCMOS integrated circuits; Feedback; Inductors; Noise reduction; Optical amplifiers; Parasitic capacitance; Photodiodes; SONET; Shunt (electrical);

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6309-4

Type

conf

DOI

10.1109/VLSIC.2000.852881

Filename

852881