The history and future of GaAs devices in commercial wireless products

Author

Golio, M. ; Newgard, B.

Author_Institution

Rockwell Collins, Cedar Rapids, IA, USA

fYear

2001

fDate

10-11 Sept. 2001

Firstpage

63

Lastpage

69

Abstract

After years of development and utilization for low volume, high performance military and space based systems, GaAs MESFET first made a major impact in the commercial wireless markets in the early 1990s. Over the next decade, evolution of commercial wireless products led to critical roles for III-V based p-HEMT and HBT as well. Technology trends and specifications of proposed future wireless systems will similarly affect the role of GaAs devices in the coming decade. The performance characteristics of GaAs devices that led to their utilization in current and past systems as well as potential future roles for these devices are discussed.

Keywords

HEMT integrated circuits; III-V semiconductors; Schottky gate field effect transistors; cellular radio; gallium arsenide; heterojunction bipolar transistors; HBT; III-V based p-HEMT; MESFET; cellular radio; commercial wireless products; gallium arsenide; performance; Cellular phones; Costs; Frequency; Gallium arsenide; History; Linearity; MESFETs; Manufacturing; Silicon; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

BroadBand Communications for the Internet Era Symposium digest, 2001 IEEE Emerging Technologies Symposium on

Conference_Location

Richardson, TX, USA

Print_ISBN

0-7803-7161-5

Type

conf

DOI

10.1109/ETS.2001.979423

Filename

979423