• DocumentCode
    2163970
  • Title

    Characterization of plasma damaged porous ULK SiCOH layers in aspect of changes in the diffusion behavior of solvents and repair-chemicals

  • Author

    Oszinda, Thomas ; Schaller, Matthias ; Fischer, Daniel ; Schulz, Stefan E.

  • Author_Institution
    Fraunhofer Center Nanoelektron. Technol., Dresden
  • fYear
    2009
  • fDate
    1-3 June 2009
  • Firstpage
    83
  • Lastpage
    85
  • Abstract
    The diffusion behavior of different solvents and repair chemicals in a porous SiCOH with pores of ~ 1,5 nm was studied. It was found for molecule with a size les 1/3 of the pore size the diffusion coefficient (De) depends mainly on the size of the molecule, while a size Gt 1/3 of the pore size does not show a linear dependency of De on the molecules size. In this regime De is mainly a function of the surface diffusion which depends on the surface energies of the solid and the liquid and adsorption effects. This study show that the porosity and the surface energies influencing the diffusion need to study in order to perform satisfactory cleaning and repair process for ULK dielectric layers.
  • Keywords
    adsorption; dielectric materials; permittivity; porosity; porous materials; silicon compounds; surface diffusion; surface energy; SiCOH; SiCOH layers; adsorption effects; cleaning process; diffusion behavior; diffusion coefficient; plasma damaged layers; porosity; porous layers; repair chemicals; solvents; surface diffusion; surface energies; ultra low-k dielectric layers; Ash; Chemical technology; Cleaning; Dielectrics; Hydrogen; Plasma applications; Plasma measurements; Solvents; Strips; Surface tension;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2009. IITC 2009. IEEE International
  • Conference_Location
    Sapporo, Hokkaido
  • Print_ISBN
    978-1-4244-4492-2
  • Electronic_ISBN
    978-1-4244-4493-9
  • Type

    conf

  • DOI
    10.1109/IITC.2009.5090346
  • Filename
    5090346