DocumentCode :
2163970
Title :
Characterization of plasma damaged porous ULK SiCOH layers in aspect of changes in the diffusion behavior of solvents and repair-chemicals
Author :
Oszinda, Thomas ; Schaller, Matthias ; Fischer, Daniel ; Schulz, Stefan E.
Author_Institution :
Fraunhofer Center Nanoelektron. Technol., Dresden
fYear :
2009
fDate :
1-3 June 2009
Firstpage :
83
Lastpage :
85
Abstract :
The diffusion behavior of different solvents and repair chemicals in a porous SiCOH with pores of ~ 1,5 nm was studied. It was found for molecule with a size les 1/3 of the pore size the diffusion coefficient (De) depends mainly on the size of the molecule, while a size Gt 1/3 of the pore size does not show a linear dependency of De on the molecules size. In this regime De is mainly a function of the surface diffusion which depends on the surface energies of the solid and the liquid and adsorption effects. This study show that the porosity and the surface energies influencing the diffusion need to study in order to perform satisfactory cleaning and repair process for ULK dielectric layers.
Keywords :
adsorption; dielectric materials; permittivity; porosity; porous materials; silicon compounds; surface diffusion; surface energy; SiCOH; SiCOH layers; adsorption effects; cleaning process; diffusion behavior; diffusion coefficient; plasma damaged layers; porosity; porous layers; repair chemicals; solvents; surface diffusion; surface energies; ultra low-k dielectric layers; Ash; Chemical technology; Cleaning; Dielectrics; Hydrogen; Plasma applications; Plasma measurements; Solvents; Strips; Surface tension;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
Type :
conf
DOI :
10.1109/IITC.2009.5090346
Filename :
5090346
Link To Document :
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