Upstream electromigration study on multiple via structures in copper interconnect

Author

Lin, Mingte ; Jou, Nick ; Liang, James W. ; Juan, Alex ; Su, K.C.

Author_Institution

United Microelectron. Corp., Hsinchu

fYear

2009

fDate

1-3 June 2009

Firstpage

86

Lastpage

88

Abstract

Upstream electromigration (EM) study was performed on different multiple via structures with different Cu line dimensions. EM performance was found to be dependent on both via layout and Cu line dimension. Failure analysis showed different EM failure modes and diffusion paths on these structures with their different grain morphology. Finite element analysis is applied to find out the current density profiles of these structures and explain their EM results. Simulated resistance increase was found to be dependent on the size and location of EM induced void in these structures.

Keywords

copper; crystal microstructure; current density; electrical resistivity; electromigration; failure analysis; finite element analysis; integrated circuit interconnections; voids (solid); Cu; copper interconnect; copper line dimension; current density profile; diffusion; failure analysis; finite element analysis; grain morphology; multiple via structures; resistance; upstream electromigration; void; Copper; Current density; Electromigration; Failure analysis; Grain boundaries; Grain size; Morphology; Reservoirs; Stress; Testing; Cu; current; electromigration; resistance; via;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090347

Filename

5090347