Title :
Upstream electromigration study on multiple via structures in copper interconnect
Author :
Lin, Mingte ; Jou, Nick ; Liang, James W. ; Juan, Alex ; Su, K.C.
Author_Institution :
United Microelectron. Corp., Hsinchu
Abstract :
Upstream electromigration (EM) study was performed on different multiple via structures with different Cu line dimensions. EM performance was found to be dependent on both via layout and Cu line dimension. Failure analysis showed different EM failure modes and diffusion paths on these structures with their different grain morphology. Finite element analysis is applied to find out the current density profiles of these structures and explain their EM results. Simulated resistance increase was found to be dependent on the size and location of EM induced void in these structures.
Keywords :
copper; crystal microstructure; current density; electrical resistivity; electromigration; failure analysis; finite element analysis; integrated circuit interconnections; voids (solid); Cu; copper interconnect; copper line dimension; current density profile; diffusion; failure analysis; finite element analysis; grain morphology; multiple via structures; resistance; upstream electromigration; void; Copper; Current density; Electromigration; Failure analysis; Grain boundaries; Grain size; Morphology; Reservoirs; Stress; Testing; Cu; current; electromigration; resistance; via;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090347
