Title :
Reduction of direct-tunneling gate leakage current in double-gate and ultra-thin body MOSFETs
Author :
Leland Chang ; Yang, K.J. ; Yee-Chia Yeo ; Yang-Kyu Choi ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The impact of energy quantization on gate tunneling current is studied for double-gate and ultra-thin body MOSFETs. The lower vertical electric field in the channel of these thin-body devices causes a reduction in gate leakage by as much as an order of magnitude. The additional effects of channel doping and high-k dielectrics are also investigated.
Keywords :
MOSFET; dielectric thin films; doping profiles; leakage currents; semiconductor device models; tunnelling; channel doping concentration; channel vertical electric field; direct-tunneling gate leakage current; double-gate MOSFETs; energy quantization; gate leakage reduction; gate tunneling current; high-k dielectrics; quantum confinement effects; thin-body devices; ultra-thin body MOSFETs; Carrier confinement; Dielectrics; Doping; Gate leakage; Leakage current; MOSFETs; Quantization; Stationary state; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979428
