Title :
Novel PEALD-Ru formation technique using H2 & H2/N2 plasma as a seed layer for direct CVD-Cu filling
Author :
Jeong, Daekyun ; Inoue, Hiroaki ; Ohno, Yoshiyuki ; Namba, Kunitoshi ; Shinriki, Hiroshi
Author_Institution :
Process Dev. Dept., ASM Japan, Tama
Abstract :
In this paper, novel Ru film formation technique by plasma enhanced atomic layer deposition (PEALD) is reported to be extremely promising as a seed layer for direct CVD-Cu full filling. PEALD-Ru film property can be controlled by H2 to N2 gas flow ratio in plasma step. PEALD-Ru film using H2/N2 mixed gas based plasma can provide low resistivity (20 muOmega-cm), sufficient Cu barrier property and 100% step-coverage. PEALD-Ru film using H2 gas based plasma can provide (002) oriented Ru film, which is confirmed as good nucleation layer for CVD-Cu formation. Stacked film of Ru(H2)/ Ru(H2/N2) is demonstrated to be attractive as an underneath for direct CVD-Cu full filling without void generation in 50 nm via pattern.
Keywords :
atomic layer deposition; copper; electrical resistivity; metallic thin films; nucleation; plasma CVD; plasma materials processing; ruthenium; Cu; PEALD-Ru formation technique; Ru; Ru film formation technique; direct CVD-Cu filling; electrical resistivity; gas flow; hydrogen-nitrogen mixed gas based plasma; nucleation layer; plasma enhanced atomic layer deposition; plasma step; seed layer; stacked film; Atomic layer deposition; Conductivity; Filling; Fluid flow; Hydrogen; Inductors; Plasma measurements; Plasma properties; Plasma temperature; Plugs;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090350
