Title :
New multi-step UV curing process for porogen-based porous SiOC
Author :
Seo, Kohei ; Oka, Yoshihiro ; Nomura, Kotaro ; Tsutsue, Makoto ; Kobori, Etsuyoshi ; Goto, Kinya ; Mizukami, Yumiko ; Ohtsuka, Toshihiro ; Tsukamoto, Kazuyoshi ; Matsumoto, Susumu ; Ueda, Tetsuya
Author_Institution :
Panasonic Semicond. Eng. Co., Ltd., Kyoto
Abstract :
In order to control the characteristics of porogen-based porous SiOC film (k < 2.5), we investigated its dependence on the wavelengths of ultraviolet (UV) light by using methods of FT-IR, TDS and nano-indentation. As a result, it was found that specific wavelengths of UV light strongly was effective to porous SiOC film production : porogen desorption, mechanical strength improvement, and reduction of the film damage. Vacuum ultraviolet (VUV) irradiation is necessary for porogen desorption. However, after porogen was removed from SiOC film, the energy of VUV irradiation was too high for porous SiOC film and this caused film damage. The energy of deep ultraviolet (DUV) irradiation was sufficient to improve mechanical strength. We propose that UV curing process should be a multi-step process consisting of VUV and DUV irradiation .The first step removes porogen using VUV irradiation. The second step forms robust porous SiOC film using DUV irradiation. A multi-step curing process was used to control the characteristics of porogen-based porous SiOC film.
Keywords :
bonds (chemical); curing; desorption; mechanical strength; nanoindentation; organic compounds; permittivity; porous semiconductors; silicon compounds; ultraviolet radiation effects; DUV irradiation; FT-IR; SiOC; TDS; UV curing; VUV irradiation; mechanical strength; nanoindentation; porogen desorption; porous SiOC film; Bonding; Chemical technology; Cities and towns; Curing; Dielectric constant; Infrared spectra; Lighting control; Production; Semiconductor films; Spectroscopy;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090352