Title :
Determination of the impact of field enhancement in low-k dielectric breakdown
Author :
Bashir, Muhammad ; Milor, Linda
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
Abstract :
Test structures have been designed to detect the impact of field enhancement on low-k dielectric breakdown at the tips of combs in comb structures. An analysis methodology has been proposed to separate the impact of area and field enhancement. Modeling utilizes characteristic lifetimes at various area ratios. The proposed model, when compared with direct fitting of the Weibull distribution, improves lifetime estimates by 2.5 orders of magnitude at 0.01% and reduces variance of the confidence bound by 73%.
Keywords :
Weibull distribution; electric breakdown; integrated circuit interconnections; integrated circuit testing; life testing; Weibull distribution; comb structures; field enhancement; interconnect systems; low-k dielectric breakdown; test structure design; Copper; Dielectric breakdown; Dielectric measurements; Electric breakdown; Geometry; Integrated circuit interconnections; Life estimation; Lifetime estimation; Testing; Voltage;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090353
