Title :
3D analytical subthreshold and quantum mechanical analyses of double-gate MOSFET
Author :
Gen Pei ; Narayanan, V. ; Zengtao Liu ; Kan, E.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Scaling studies on double-gate MOSFET and its variations are critical to CMOS technology node below 70 nm. In this work we present 3D analytical modeling in the subthreshold region and analytical quantum mechanical considerations of channel coupling that can facilitate device design and technology selection. The analytical models are corroborated with both experiments and distributed simulation.
Keywords :
Laplace equations; MOSFET; hot carriers; isolation technology; semiconductor device models; 3D analytical subthreshold; 70 nm; CMOS technology node; analytical quantum mechanical considerations; channel coupling; device design; distributed simulation; double-gate MOSFET; quantum mechanical analyses; technology selection; Analytical models; CMOS technology; Electrostatic analysis; Hot carrier effects; Hot carriers; MOSFET circuits; Numerical simulation; Quantum mechanics; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979432
