Experimental characterization of transient floating body effect in non-fully depleted SOI MOSFET

Author

Fung, Samuel K H ; Chan, Mansun ; Ko, Ping K.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

fYear

1997

fDate

6-9 Oct 1997

Firstpage

80

Lastpage

81

Abstract

This paper describes the characterization of transient floating body effect in non-fully depleted SOI MOSFETs. The front gate coupling factor (P_fgc) is used as a measure of the “floating body stability”. A simple and yet accurate technique is proposed to measure P_fgc. From measurement, impact of scaling channel length on P_fgc is investigated. The measurement result agrees with simple analytical model. In sub-0.2 μm devices, front gate coupling becomes very weak and these devices are more susceptible to instability induced by drain coupling

Keywords

MOSFET; characteristics measurement; semiconductor device models; silicon-on-insulator; 0.2 micron; Si; analytical model; drain coupling; front gate coupling factor; instability; nonfully depleted SOI MOSFET; scaling channel length; transient floating body effect; Capacitance; Circuit stability; Coupling circuits; Length measurement; MOSFET circuits; Pulse measurements; Stability analysis; Steady-state; Threshold voltage; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634942

Filename

634942