Title :
New Solid State Power Amplifiers Design Using Large Signal S Parameters
Author :
Hazouard, Mathieu ; Kerhervé, E. ; Jarry, P.
Author_Institution :
IXL Microelectronics Laboratory - UMR 5818 CNRS - Bordeaux 1 University, 351, cours de la libération - 33405 Talence Cedex - France. Phone: +33(0) 556 842611 / Fax: +33(0) 556 371 545 / email: hazouard@ixl.u-bordeaux.fr
Abstract :
A new method related to power amplifier design is described in this paper. Based on Large signal S parameters, defined as function of the input power, coupled with the Real Frequency technique, this approach determines the optimum load impedance for maximum added power.
Keywords :
Frequency; Impedance; Laboratories; Low-noise amplifiers; Microelectronics; Power amplifiers; Power generation; Scattering parameters; Signal design; Solid state circuits;
Conference_Titel :
Microwave Conference, 2001. 31st European
Conference_Location :
London, England
DOI :
10.1109/EUMA.2001.339069
