Title :
Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs
Author_Institution :
Dept. of Electr. Eng., California Univ., Riverside, CA, USA
Abstract :
The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO´s current status, its applications, and its theoretical extensions.
Keywords :
capacitance; electronic engineering computing; gallium arsenide; high electron mobility transistors; leakage currents; nanotechnology; resonant tunnelling diodes; semiconductor device models; silicon; tunnel diodes; HEMTs; InAs-AlAs; InGaAs-InAlAs; MOS leakage; NEMO; Nanoelectronic Engineering Modeling software; RTDs; Si; Si tunnel diodes; capacitance; quantum electron transport; quantum hole transport; quantum simulation; semiconductor devices; Analytical models; Charge carrier processes; Electrons; Government; HEMTs; Lakes; Quantum capacitance; Quantum cascade lasers; Quantum mechanics; Semiconductor diodes;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979439
