DocumentCode
2164344
Title
Full quantum simulation, design, and analysis of Si tunnel diodes, MOS leakage and capacitance, HEMTs, and RTDs
Author
Lake, R.
Author_Institution
Dept. of Electr. Eng., California Univ., Riverside, CA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
The Nanoelectronic Engineering Modeling software (NEMO) has been used to model the quantum electron and hole transport and charge in a wide variety of material systems and semiconductor devices. This paper provides an overview of NEMO´s current status, its applications, and its theoretical extensions.
Keywords
capacitance; electronic engineering computing; gallium arsenide; high electron mobility transistors; leakage currents; nanotechnology; resonant tunnelling diodes; semiconductor device models; silicon; tunnel diodes; HEMTs; InAs-AlAs; InGaAs-InAlAs; MOS leakage; NEMO; Nanoelectronic Engineering Modeling software; RTDs; Si; Si tunnel diodes; capacitance; quantum electron transport; quantum hole transport; quantum simulation; semiconductor devices; Analytical models; Charge carrier processes; Electrons; Government; HEMTs; Lakes; Quantum capacitance; Quantum cascade lasers; Quantum mechanics; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979439
Filename
979439
Link To Document