Thin-layer Au-Sn solder bonding process for wafer-level packaging, electrical interconnections and MEMS applications

Author

Belov, N. ; Chou, T.-K. ; Heck, J. ; Kornelsen, K. ; Spicer, D. ; Akhlaghi, S. ; Wang, M. ; Zhu, T.

Author_Institution

Nanochip, Inc., Fremont, CA

fYear

2009

fDate

1-3 June 2009

Firstpage

128

Lastpage

130

Abstract

The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300degC and features a thin bond line (2-3 mum), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.

Keywords

integrated circuit interconnections; micromechanical devices; silver alloys; soldering; solders; tin alloys; wafer bonding; wafer level packaging; Au-Sn solder bonding; AuSn; MEMS; Nb/Au seed layer; adhesion; barrier film; bond gap control; bond strength; electrical interconnections; liquid-proof sealing; reliability; temperature 300 degC; wafer-level packaging; Bonding processes; Gold; Micromechanical devices; Oxidation; Silicon; Stress control; Testing; Thermal stresses; Wafer bonding; Wafer scale integration; AuSn solder; Wafer bonding; adhesion layer; bond gap control; electrical interconnects; low stress bonding; sealing; solder wetting; thin bond line;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090361

Filename

5090361