Title :
Evaluation of plasma damage in blanket and patterned low-k structures by near-field scanning probe microwave microscope: effect of plasma ash chemistry
Author :
Urbanowicz, A.M. ; Talanov, V.V. ; Pantouvaki, M. ; Struyf, H. ; Gendt, S. De ; Baklanov, M.R.
Author_Institution :
IMEC, Leuven
Abstract :
The effect of ash chemistry on dielectric constant of blanket and patterned low-k was studied using a near-field scanning probe microwave microscope, known commercially as NeoMetriKTM technology. Two common photoresist ash approaches with the same etch sequence were studied: plasma assisted sublimation of photoresist at elevated temperature and ion-assisted ash at room temperature. The results for blanket low-k agree well with the FTIR and water source ellipsometric porosimetry (WEP) measurements. The amount of sidewall damage measured in patterned structures before metallization confirms the expected trends.
Keywords :
ellipsometry; low-k dielectric thin films; metallisation; near-field scanning optical microscopy; permittivity; photoresists; porosity; sputter etching; sublimation; FTIR; blanket; dielectric constant; etching; ion-assisted ash; low-k structures; metallization; near-field scanning probe microwave microscope; photoresist ash; plasma ash chemistry; plasma damage; sublimation; water source ellipsometric porosimetry; Ash; Chemical technology; Dielectric constant; Microscopy; Plasma applications; Plasma chemistry; Plasma measurements; Plasma temperature; Probes; Resists;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090363
