Title :
Double-balanced, hybrid mixer with multi-decade bandwidth
Author :
Gunyan, Daniel B.
Author_Institution :
Microwave Technol. Center, Agilent Technol., Santa Rosa, CA, USA
Abstract :
An ultra-broadband mixer design that uses a hybrid technology is described. The design incorporates a low-barrier diode mixer, thin film interconnect, and a pHEMT LO-drive amplifier. The mixer gives better than -35 dB conversion efficiency at RF frequencies from less than 10 MHz to greater than 110 GHz for at least 10,000:1 bandwidth. Simulations show that the mixer, with some improvements, can operate from 10 MHz to 150 GHz. Multiple mixers can be integrated into a single hybrid module. An integrated dual-mixer module with pHEMT RF-buffer amplifiers is also described. This mixer module is limited by the bandwidth of the buffer amplifiers, but still gives better than -35 dB conversion efficiency from less than 10 MHz to 100 GHz.
Keywords :
HEMT circuits; UHF integrated circuits; UHF mixers; hybrid integrated circuits; integrated circuit design; microwave integrated circuits; microwave mixers; millimetre wave integrated circuits; millimetre wave mixers; radiofrequency amplifiers; ultra wideband technology; 0.010 to 150 GHz; double-balanced hybrid mixer; frequency conversion; hybrid integrated circuits; integrated dual-mixer module; low-barrier diode mixer; microwave mixers; millimeter wave mixers; multi-decade bandwidth; pHEMT LO-drive amplifier; pHEMT RF-buffer amplifiers; thin film interconnects; ultra-broadband mixer design; Bandwidth; Circuit testing; Diodes; Frequency conversion; Instruments; Integrated circuit technology; Microwave technology; Mixers; PHEMTs; Radio frequency;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517135