DocumentCode
2164475
Title
Complementary metamaterial infrared absorber
Author
Pitchappa, Prakash ; Chong Pei Ho ; Kropelnicki, Piotr ; Chengkuo Lee
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear
2013
fDate
18-22 Aug. 2013
Firstpage
143
Lastpage
144
Abstract
Complementary metamaterial based infrared (IR) absorber using complementary metal oxide semiconductor (CMOS) compatible material is presented. The robustness of the proposed device is ensured by studying the effect of fabrication deviation on the device performance. The measured absorption was 70% in the near IR region. The complementary metamaterial absorber can be engineered to provide near unity absorption in IR region.
Keywords
CMOS integrated circuits; infrared spectra; optical fabrication; optical metamaterials; CMOS compatible material; complementary metal oxide semiconductor compatible material; complementary metamaterial infrared absorber; fabrication deviation effect; Absorption; CMOS integrated circuits; Electromagnetics; Fabrication; Metals; Metamaterials; Absorber; CMOS compatible; Complementary Metamaterial; Infrared;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical MEMS and Nanophotonics (OMN), 2013 International Conference on
Conference_Location
Kanazawa
ISSN
2160-5033
Print_ISBN
978-1-4799-1512-5
Type
conf
DOI
10.1109/OMN.2013.6659100
Filename
6659100
Link To Document