Title :
Compact current model for mesa-isolated fully-depleted ultrathin SOI NMOS devices considering sidewall-related narrow channel effects
Author :
Kuo, J.B. ; Su, K.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents the sidewall-related narrow channel effects on the current conduction in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. As verified by the 3D simulation results, the dosed-form analytical model predicts that in the subthreshold region the channel current near the sidewall dominates due to narrow channel effects
Keywords :
MOSFET; electron density; isolation technology; semiconductor device models; silicon-on-insulator; 3D simulation results; Si; channel current; current conduction model; dosed-form analytical model; mesa-isolated fully-depleted devices; sidewall-related narrow channel effects; subthreshold region; ultrathin SOI NMOS devices; Analytical models; CMOS process; CMOS technology; Electrons; Geometry; MOS devices; Semiconductor device modeling; Thin film devices; Threshold voltage; Transistors;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634944
