Title :
MMIC HEMT switch for switch matrix of satellite communication system
Author :
Ryu, K.K. ; Shin, D.H. ; Yom, I.B. ; Lee, M.Q. ; Park, J.H. ; Lee, S.P.
Author_Institution :
Dep. of Electron. Eng., Hanbat Nat. Univ., Daejeon, South Korea
Abstract :
A MMIC (monolithic microwave integrated circuit) switch chip using InGaAs/GaAs p-HEMT process has been developed for switch matrix of satellite communication system. This absorptive type MMIC switch has good reflection coefficients performances of input and output ports at both on and off-states. A quarter wavelength impedance transformer is realized with lumped elements of MIM capacitor and spiral inductor for 3GHz band to reduce the chip size. The MMIC switch covers the range of 3.2∼3.6GHz. According to the on-wafer measurement, the fabricated MMIC switch with miniature size of 1.6mm×1.3mm demonstrates insertion loss below 2dB, isolation above 56.8dB, respectively, and the performance coincides with simulation results.
Keywords :
III-V semiconductors; field effect MMIC; field effect transistor switches; gallium arsenide; indium compounds; microwave switches; satellite communication; 3 GHz; 3.2 to 3.6 GHz; InGaAs-GaAs; MIM capacitors; MMIC HEMT switch; MMIC switch chip; lumped element networks; monolithic microwave integrated circuits; p-HEMT process; quarter wavelength impedance transformer; satellite communication systems; spiral inductors; Communication switching; Gallium arsenide; HEMTs; Indium gallium arsenide; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Satellite communication; Switches; Switching circuits;
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
Print_ISBN :
0-7803-8845-3
DOI :
10.1109/MWSYM.2005.1517138