DocumentCode :
2164521
Title :
A self-aligned airgap interconnect scheme
Author :
Chen, Hsien-Wei ; Jeng, Shin-Puu ; Tsai, Hao-Yi ; Liu, Yu-Wen ; Wei, Hsiu-Ping ; Yu, Doug C. H. ; Sun, Y.C.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd. (TSMC), Hsinchu
fYear :
2009
fDate :
1-3 June 2009
Firstpage :
146
Lastpage :
148
Abstract :
A new air-gap interconnect scheme with no additional patterning step successfully resolves the issue of unlanded via, and provides good interconnect reliability and improved packaging margin. We demonstrate that the insertion of airgaps in a very low-k dielectric (k=2.5) reduces the RC value of a 0.07 um/0.07 um comb structure by ~14%, which is equivalent to an effective dielectric constant about 2.2.
Keywords :
RC circuits; air gaps; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; low-k dielectric thin films; permittivity; RC value reduction; dielectric constant; interconnect reliability; low-k dielectrics; packaging margin; self-aligned airgap interconnect scheme; Air gaps; Capacitance; Copper; Dielectric constant; Etching; Leakage current; Packaging; Protection; Sun; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
Type :
conf
DOI :
10.1109/IITC.2009.5090367
Filename :
5090367
Link To Document :
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