Title :
Enabling 3D interconnects with metal direct bonding
Author :
Di Cioccio, L. ; Gueguen, Pierric ; Signamarcheix, Thomas ; Rivoire, Maurice ; Scevolab, D. ; Cahours, R. ; Leduc, Patrick ; Assous, M. ; Clavelier, Laurent
Author_Institution :
CEA Leti - MINATEC, Grenoble
Abstract :
This paper presents the implementation of a key technology developed for high density 3-D integration by circuit stacking. Direct copper bonding at room temperature, atmospheric pressure and ambient air of copper pads allowed the elaboration of a 10times10 mum vertical interconnect with a contact resistance of 10 mohms. First tests on tungsten bonding will be also reviewed.
Keywords :
contact resistance; integrated circuit interconnections; tungsten; wafer bonding; 3D interconnects; Cu; W; circuit stacking; contact resistance; metal direct bonding; resistance 10 mohm; size 10 mum; tungsten bonding; Annealing; CMOS technology; Copper; Energy measurement; Integrated circuit interconnections; Probes; Silicon; Temperature; Through-silicon vias; Wafer bonding;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090369
