• DocumentCode
    2164554
  • Title

    Analog parameters of short-channel SOI MOSFETs

  • Author

    Colinge, J.P. ; Cao, M. ; Greene, W.

  • Author_Institution
    Univ. Catholique de Louvain, Belgium
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    88
  • Lastpage
    89
  • Abstract
    The parameters of SOI devices for digital applications are well known (saturation current, subthreshold swing, transconductance, etc.). Different parameters are relevant, however, for analog applications. These parameters are the gm/ID ratio, the Early voltage, the dc gain, and the gain×bandwidth product. This paper describes the evolution of these parameters in short-channel SOI devices
  • Keywords
    MOS analogue integrated circuits; MOSFET; characteristics measurement; silicon-on-insulator; Early voltage; Si; analog parameters; dc gain; gm/ID ratio; gain×bandwidth product; short-channel SOI MOSFETs; Bandwidth; Capacitance; Circuit synthesis; Fabrication; Laboratories; MOSFETs; Silicon; Transconductance; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634946
  • Filename
    634946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2164554