Title :
Cobalt and nickel atomic layer depositions for contact applications
Author :
Lee, Han-Bo-Ram ; Kim, Woo-Hee ; Park, Yongjun ; Baik, Sunggi ; Kim, Hyungjun
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang
Abstract :
Novel NH3-based Co thermal atomic layer deposition (T-ALD) process using Co(iPr-AMD)2 (bis(N,N´-diisopropylacetamidinato) cobalt(II)) and NH3 as a precursor and a reactant, respectively, was developed for nanoscale contact applications. The T-ALD Co films showed high purity with perfect conformality inside nanosize contact holes. By annealing the T-ALD Co films, CoSi2 was obtained. Similarly, Ni T-ALD process using NH3 as a reactant was also investigated by using Ni(dmamb)2 (bis(dimethylamino-2-methyl-2-butoxo)nickel) and Ni films showed perfect conformality of T-ALD Ni.
Keywords :
atomic layer deposition; cobalt; electrical contacts; nickel; Co; Ni; cobalt-nickel atomic layer depositions; contact applications; film annealing; nanoscale contact applications; nanosize contact holes; thermal atomic layer deposition process; Atherosclerosis; Atomic layer deposition; Chemical analysis; Cobalt; Materials science and technology; Nickel; Rapid thermal annealing; Scanning electron microscopy; Substrates; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090371
