Title :
A design of Ka-band GaAs PHEMT power amplifier MMIC
Author :
Weizhong Li ; Longxin Peng
Author_Institution :
Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing Electron. Device Inst., Nanjing
Abstract :
The design of a Ka-band power amplifier is presented. The three-stage amplifier exhibits an output power of 0.5 watt with small signal gain above 16 dB across the 32 GHz to 34 GHz band. The amplifier is characterized using linear and nonlinear methods. The stability, especially odd mode stability, is carefully considered. Both schematic and EM simulation results are shown.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; gallium arsenide; millimetre wave power amplifiers; power HEMT; EM simulation; GaAs; Ka-band PHEMT power amplifier design; MMIC; frequency 32 GHz to 34 GHz; linear method; nonlinear method; odd mode stability; power 0.5 W; three-stage amplifier; Circuits; Gallium arsenide; Impedance matching; MIM capacitors; MMICs; Optimized production technology; PHEMTs; Power amplifiers; Power generation; Resistors;
Conference_Titel :
Antennas, Propagation and EM Theory, 2008. ISAPE 2008. 8th International Symposium on
Conference_Location :
Kunming
Print_ISBN :
978-1-4244-2192-3
Electronic_ISBN :
978-1-4244-2193-0
DOI :
10.1109/ISAPE.2008.4735410
