Title :
Growth analysis of self-formed Ti-rich interface layers in Cu(Ti)/dielectric-layer samples using Rutherford Backscattering Spectrometry
Author :
Kohama, Kazuyuki ; Ito, Kazuhiro ; Mori, Kenichi ; Maekawa, Kazuyoshi ; Shirai, Yasuharu ; Murakami, Masanori
Author_Institution :
Dept. of Mater. Sci. & Eng., Kyoto Univ., Kyoto
Abstract :
The Rutherford backscattering spectrometry (RBS) technique was employed for the growth investigation of Ti-rich interface layers in the annealed Cu(Ti) dielectric-layer . Growth behavior observed in RBS was similar to that in TEM. Thus, the RBS technique is indicated to be appropriate method for the growth analysis of the Ti-rich interface layers.
Keywords :
Rutherford backscattering; annealing; copper alloys; dielectric materials; interface structure; permittivity; titanium alloys; Cu(Ti)/dielectric layer; CuTi-JkJk; RBS; Rutherford backscattering spectrometry; TEM; Ti-rich interface layers; annealing; Annealing; Atomic beams; Atomic measurements; Backscatter; Dielectric constant; Electrochemical impedance spectroscopy; Electronic mail; Fabrication; Materials science and technology; Temperature;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090372
