Comparison of X-band MESFET and HBT class-E power amplifiers for EER transmitters

Author

Pajic, Srdjan ; Wang, Narisi ; Popovic, Zoya

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

fYear

2005

fDate

12-17 June 2005

Abstract

This paper presents a comparison of hybrid microwave class-E power amplifiers (PAs) using two types of active devices: GaAs MESFET and InP DHBT. The active devices have comparable periphery, are capable of delivering 20-21 dBm of output power at 10 GHz, with drain (collector) efficiencies in the range of 65%. Both PAs are characterized for envelope elimination and restoration technique (EER). Power, gain and efficiency sweeps, AM-AM and AM-PM characteristics, frequency sweeps and drain (collector) bias modulation properties are presented for the MESFET and HBT class-E PA.

Keywords

MESFET circuits; amplitude modulation; bipolar transistor circuits; microwave power amplifiers; phase modulation; radio transmitters; 10 GHz; AM-AM characteristics; AM-PM characteristics; EER transmitters; GaAs; HBT class-E power amplifiers; InP; X-band MESFET power amplifiers; drain bias modulation properties; envelope elimination and restoration technique; frequency sweeps; gain efficiency; hybrid microwave class-E power amplifiers; microwave devices; microwave power bipolar transistor amplifiers; power efficiency; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; MESFETs; Microwave amplifiers; Microwave devices; Power amplifiers; Power generation; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2005 IEEE MTT-S International

ISSN

01490-645X

Print_ISBN

0-7803-8845-3

Type

conf

DOI

10.1109/MWSYM.2005.1517144

Filename

1517144