Title :
Novel low-k SiOC (k=2.4) with superior tolerance to direct polish and ashing for advanced BEOL integration
Author :
Asami, N. ; Owada, T. ; Akiyama, S. ; Ohara, N. ; Iba, Y. ; Kouno, T. ; Kudo, H. ; Takesako, S. ; Osada, T. ; Kirimura, T. ; Watatani, H. ; Uedono, A. ; Nara, Y. ; Kase, M.
Author_Institution :
Fujitsu Microelectron. Ltd., Kuwana
Abstract :
We established novel SiOC (k=2.4) with higher process damage tolerance. The SiOC was deposited using organo-silane with acetylene bond as a precursor of plasma enhanced chemical vapor deposition (PECVD). The precursor takes high concentration of carbon in the SiOC and the SiOC has closed pores since deposited without using any porogens, therefore lower damage by ashing and direct Cu polish are achieved. We fabricated Cu wirings using direct polish. We confirmed that dielectric constant of the SiOC did not increase after ashing and direct polish process and maintained k=2.4.
Keywords :
copper; integrated circuit reliability; low-k dielectric thin films; permittivity; plasma CVD; polishing; silicon compounds; SiOC; acetylene bond; advanced BEOL integration; ashing; dielectric constant; direct polish; organo-silane; plasma enhanced chemical vapor deposition; process damage tolerance; Bonding; Capacitance measurement; Curing; Dielectric constant; Dielectric measurements; Frequency measurement; Plasma measurements; Semiconductor films; Spectroscopy; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090373
