DocumentCode :
2164722
Title :
Silicon single-electron memory and logic devices for room temperature operation
Author :
Koga, J. ; Ohba, R. ; Uchida, K. ; Toriumi, A.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
fYear :
2001
fDate :
2-5 Dec. 2001
Abstract :
Silicon single-electron memory and logic devices, which can operate normally at room temperature, are described. Doubly stacked floating dot memory can overcome data-retention issues. In SiN dot memory, the idea of an advanced device incorporating quantum concept into existing device is proposed. The SiN dot memory is applicable to the doubly stacked floating dot memory concept for a total solution. Programmable SET logic can be an innovative SET operation scheme realizing high functionality over conventional CMOS logic.
Keywords :
Coulomb blockade; elemental semiconductors; programmable logic devices; semiconductor storage; silicon; single electron transistors; Si; SiN; data-retention issue; doubly stacked floating dot memory; functionality; programmable SET logic; room temperature operation; single-electron logic devices; single-electron memory devices; CMOS logic circuits; Electron traps; Logic circuits; Logic devices; MONOS devices; Nonvolatile memory; Silicon compounds; Single electron devices; Single electron memory; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
Type :
conf
DOI :
10.1109/IEDM.2001.979452
Filename :
979452
Link To Document :
بازگشت