Title :
Effect of wet pre-treatment on interfacial adhesion energy of direct Cu-Cu bond
Author :
Jang, E.J. ; Kim, B. ; Matthias, T. ; Hyun, S. ; Lee, H.J. ; Park, Y.B.
Author_Institution :
Sch. of Mater. Sci. & Eng., Andong Nat. Univ., Andong
Abstract :
Cu and Ti films were deposited by sputtering on thermally oxidized Si wafers and then the deposited films were bonded by direct Cu-Cu thermo-compression bonding for evaluating the effect of the wet pre-treatment on the interfacial adhesion energy. The interfacial adhesion energy was evaluated as 0.29, 1.28, 1.64, 1.17, and 0.42 J/m2 by acetic acid pretreatment at 35degC for 0, 1, 5, 10, and 15 min. The existence of optimum wet pretreatment time seems to be related to the film thickness effect as well as the surface oxide removal effect.
Keywords :
adhesion; chemical interdiffusion; copper; integrated circuit bonding; integrated circuit interconnections; silicon; surface treatment; tape automated bonding; titanium; Cu; Ti; acetic acid pretreatment; direct Cu-Cu bond; film thickness effect; interfacial adhesion energy; sputtering; surface oxide removal effect; temperature 35 degC; thermocompression bonding; time 0 min to 15 min; wet pretreatment; Adhesives; Electric resistance; Energy measurement; Materials science and technology; Power engineering and energy; Semiconductor films; Surface resistance; Surface treatment; Temperature; Wafer bonding;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090375
