Effect of wet pre-treatment on interfacial adhesion energy of direct Cu-Cu bond

Author

Jang, E.J. ; Kim, B. ; Matthias, T. ; Hyun, S. ; Lee, H.J. ; Park, Y.B.

Author_Institution

Sch. of Mater. Sci. & Eng., Andong Nat. Univ., Andong

fYear

2009

fDate

1-3 June 2009

Firstpage

165

Lastpage

166

Abstract

Cu and Ti films were deposited by sputtering on thermally oxidized Si wafers and then the deposited films were bonded by direct Cu-Cu thermo-compression bonding for evaluating the effect of the wet pre-treatment on the interfacial adhesion energy. The interfacial adhesion energy was evaluated as 0.29, 1.28, 1.64, 1.17, and 0.42 J/m² by acetic acid pretreatment at 35degC for 0, 1, 5, 10, and 15 min. The existence of optimum wet pretreatment time seems to be related to the film thickness effect as well as the surface oxide removal effect.

Keywords

adhesion; chemical interdiffusion; copper; integrated circuit bonding; integrated circuit interconnections; silicon; surface treatment; tape automated bonding; titanium; Cu; Ti; acetic acid pretreatment; direct Cu-Cu bond; film thickness effect; interfacial adhesion energy; sputtering; surface oxide removal effect; temperature 35 degC; thermocompression bonding; time 0 min to 15 min; wet pretreatment; Adhesives; Electric resistance; Energy measurement; Materials science and technology; Power engineering and energy; Semiconductor films; Surface resistance; Surface treatment; Temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090375

Filename

5090375