• DocumentCode
    2164776
  • Title

    Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier

  • Author

    Inoue, F. ; Yokoyama, T. ; Tanaka, S. ; Yamamoto, K. ; Koyanagi, M. ; Fukushima, T. ; Wang, Z. ; Shingubara, S.

  • Author_Institution
    Dept. of Mech. Eng., Kansai Univ., Suita
  • fYear
    2009
  • fDate
    1-3 June 2009
  • Firstpage
    167
  • Lastpage
    168
  • Abstract
    We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO2. Furthermore, we found that the addition of Cl ions to SPS- and PEG-plating bath significantly improved the conformal deposition property even for a few mum in diameter TSVs with the aspect ratio higher than 10.
  • Keywords
    copper alloys; electrodeposition; electroplating; tungsten alloys; Cu; W; conformal deposition property; electroless plated copper-tungsten-alloy barrier; low resistance TSV; through-silicon via formation; Communications technology; Conductivity; Copper alloys; Dielectric substrates; Filling; Immune system; Mechanical engineering; Temperature; Through-silicon vias; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2009. IITC 2009. IEEE International
  • Conference_Location
    Sapporo, Hokkaido
  • Print_ISBN
    978-1-4244-4492-2
  • Electronic_ISBN
    978-1-4244-4493-9
  • Type

    conf

  • DOI
    10.1109/IITC.2009.5090376
  • Filename
    5090376
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2164776