Title :
Study of low resistance TSV using electroless plated copper and tungsten-alloy barrier
Author :
Inoue, F. ; Yokoyama, T. ; Tanaka, S. ; Yamamoto, K. ; Koyanagi, M. ; Fukushima, T. ; Wang, Z. ; Shingubara, S.
Author_Institution :
Dept. of Mech. Eng., Kansai Univ., Suita
Abstract :
We studied a low temperature deposition of tungsten-alloy barrier and copper layers only by electroless plating, with an aim of realizing low resistance TSV with a high aspect ratio. We succeeded in successive deposition of W-Ni-P barrier layer and Cu on SiO2. Furthermore, we found that the addition of Cl ions to SPS- and PEG-plating bath significantly improved the conformal deposition property even for a few mum in diameter TSVs with the aspect ratio higher than 10.
Keywords :
copper alloys; electrodeposition; electroplating; tungsten alloys; Cu; W; conformal deposition property; electroless plated copper-tungsten-alloy barrier; low resistance TSV; through-silicon via formation; Communications technology; Conductivity; Copper alloys; Dielectric substrates; Filling; Immune system; Mechanical engineering; Temperature; Through-silicon vias; Tungsten;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090376
