Title :
Memory characteristics of Si quantum dot devices with SiO/sub 2//ALD Al/sub 2/O/sub 3/ tunneling dielectrics
Author :
Fernandes, A. ; DeSalvo, B. ; Baron, T. ; Damlencourt, J.F. ; Papon, A.M. ; Lafond, D. ; Mariolle, D. ; Guillaumot, B. ; Besson, P. ; Masson, P. ; Ghibaudo, G. ; Panankakis, G. ; Martin, F. ; Haukka, S.
Author_Institution :
Lab d´Electron. et de Technol. de l´Inf., CEA, Centre d´Etudes Nucleaires de Grenoble, France
Abstract :
Presents electrical and physical characteristics of memory devices with high density Si quantum dots integrated on SiO/sub 2//ALD Al/sub 2/O/sub 3/ tunnelling dielectrics. Devices show high threshold voltage shift at low programming voltages and good reliability behaviour. ALD Al/sub 2/O/sub 3/ can be ascribed as a suitable surface for well-controlled growth of crystalline Si quantum dots for future memory applications.
Keywords :
alumina; atomic layer epitaxial growth; elemental semiconductors; field effect memory circuits; integrated circuit reliability; semiconductor quantum dots; silicon; silicon compounds; tunnelling; ALD; SiO/sub 2/-Al/sub 2/O/sub 3/-Si; SiO/sub 2//Al/sub 2/O/sub 3//Si; electrical characteristics; memory characteristics; physical characteristics; programming voltages; quantum dot devices; reliability behaviour; threshold voltage shift; tunneling dielectrics; Crystallization; Dielectric devices; Dielectric substrates; Quantum dots; Rough surfaces; Surface roughness; Temperature; Threshold voltage; Tunneling; US Department of Transportation;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979455
