The integration of SWNTs with CMOS IC after covering Nickel/Gold on the Aluminum electrodes

Author

Huang, Jung-Tang ; Jenq, Kai-Yuan ; Lin, Po-Chin ; Hsu, Hou-Jun ; Tsai, Ting- Chiang ; Chen, Ching-Kong

Author_Institution

Dept. of Inst. of Mechatron. Eng., Nat. Taipei Univ. of Technol., Taipei

fYear

2009

fDate

1-3 June 2009

Firstpage

171

Lastpage

172

Abstract

This paper presents the interconnection of single-walled carbon nanotube (SWNT) between electrodes on a CMOS integrated circuit chip made by TSMC 0.35 mum CMOS process. Alternating current dielectrophoretic force (AC-DEP) method is employed to micro-electrode that makes SWNTs deposited between electrodes. Using electroless nickel and immersion gold to cover the electrodes of Al could really increase the current more than 3 orders when SWNTs are connected between electrodes.

Keywords

CMOS integrated circuits; aluminium; carbon nanotubes; electrophoresis; gold; integrated circuit interconnections; microelectrodes; nickel; Al; Au; C; CMOS IC; CMOS integrated circuit chip; Ni; SWNT; TSMC; alternating current dielectrophoretic force; aluminum electrodes; electroless nickel; immersion gold; single-walled carbon nanotube; size 0.35 mum; Aluminum; CMOS integrated circuits; CMOS process; CMOS technology; Current measurement; Electrodes; Gold; Nickel; Silicon; Surface treatment; AC-DEP; CMOS; SWNTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090378

Filename

5090378