• DocumentCode
    2164854
  • Title

    Atomic layer deposition of copper thin film using CuII(diketoiminate)2 and H2

  • Author

    Byeol Han ; Park, Kwang-Min ; Kwangchol Park ; Park, Jung-Woo ; Won-Jun Lee

  • Author_Institution
    Dept. of Adv. Mater. Eng., Sejong Univ., Seoul
  • fYear
    2009
  • fDate
    1-3 June 2009
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    We report for the first time the atomic layer deposition (ALD) of Cu film using alternating exposures to CuII(diketoiminate)2 and H2. The influences of deposition temperature on the properties of the deposited film were investigated at 140-220degC. Minimum sheet resistance and continuous film surface on Pt substrate were obtained at 180-200degC. The resistivity of 17-nm-thick ALD Cu film was ~7 muOmegamiddotcm.
  • Keywords
    atomic layer deposition; copper; electrical resistivity; integrated circuit interconnections; metallic thin films; Cu; Cu interconnect; atomic layer deposition; continuous film surface; copper thin film; deposition temperature; resistivity; sheet resistance; size 17 nm; temperature 140 degC to 220 degC; Atomic layer deposition; Conductivity; Copper; Electrons; Hydrogen; Sputtering; Substrates; Surface morphology; Surface resistance; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2009. IITC 2009. IEEE International
  • Conference_Location
    Sapporo, Hokkaido
  • Print_ISBN
    978-1-4244-4492-2
  • Electronic_ISBN
    978-1-4244-4493-9
  • Type

    conf

  • DOI
    10.1109/IITC.2009.5090379
  • Filename
    5090379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2164854