Title :
Ruthenium films deposited under H2 by MOCVD using a novel liquid precursor
Author :
Kadota, Takumi ; Hasegawa, Chihiro ; Nihei, Hiroshi
Author_Institution :
Res. & Dev. Dept., Ube Ind., Ltd., Ube
Abstract :
Ruthenium thin films were deposited under H2 using a novel liquid Ru precursor, bis(acetylacetonato)(eta4-1,5-hexadiene)ruthenium, Ru(acac)2(hd). The resisitivity, cross section and surface morphology of the deposited Ru films were examined. The Ru films had a relatively low resistivity of about 90 muOmegamiddotcm at 270degC. X-ray photoelectron spectroscopy (XPS) showed that the Ru films contained no carbon and oxygen impurities. The Ru film surface was fairly smooth, as measured by atomic force microscopy (AFM). The root-mean-square (RMS) roughness of the Ru films was 0.34 nm. No incubation time of the formation of the Ru films was observed. The activation energy of the formation of the Ru films was found to be 0.51 eV on the SiO2/Si substrates.
Keywords :
MOCVD; X-ray photoelectron spectra; atomic force microscopy; electrical resistivity; metallic thin films; ruthenium; surface morphology; surface roughness; AFM; MOCVD; Ru; Si; SiO2-Si; X-ray photoelectron spectroscopy; XPS; atomic force microscopy; bis(acetylacetonato)(eta4-1,5-hexadiene)ruthenium; cross section; resisitivity; ruthenium thin films; surface morphology; temperature 270 degC; Atomic force microscopy; Atomic measurements; Conductivity; Force measurement; Impurities; Rough surfaces; Spectroscopy; Sputtering; Surface morphology; Surface roughness;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090380
