Title :
A new near-infrared-light-emitting diode of monodispersed nanocrystallite silicon
Author :
Yoshida, T. ; Suzuki, N. ; Makino, T. ; Yamada, Y.
Author_Institution :
Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Kanagawa, Japan
Abstract :
The purpose of this work is to develop a near-infrared-light-emitting diode with active materials of monodispersed Si nanocrystallites that are highly compatible with ULSI technology. The monodispersed Si nanocrystallites were synthesized by laser ablation and subsequent size-classification process. The near-infrared emission was sharp and showed a peak above the band-gap region (position: 1.17 eV, width: 0.15 eV); therefore, it presumably originates from spatial quantum confinement effects of the carriers.
Keywords :
elemental semiconductors; light emitting diodes; nanostructured materials; pulsed laser deposition; silicon; 1.17 eV; Si; ULSI technology; active material; laser ablation; monodispersed nanocrystallite silicon; near-infrared-light-emitting diode; quantum confinement; size classification; Control system synthesis; Gas lasers; Helium; Laser ablation; Light emitting diodes; Nanostructured materials; Optical materials; Programmable logic arrays; Silicon; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979460
