A new near-infrared-light-emitting diode of monodispersed nanocrystallite silicon

Author

Yoshida, T. ; Suzuki, N. ; Makino, T. ; Yamada, Y.

Author_Institution

Adv. Technol. Res. Labs., Matsushita Electr. Ind. Co. Ltd., Kanagawa, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

The purpose of this work is to develop a near-infrared-light-emitting diode with active materials of monodispersed Si nanocrystallites that are highly compatible with ULSI technology. The monodispersed Si nanocrystallites were synthesized by laser ablation and subsequent size-classification process. The near-infrared emission was sharp and showed a peak above the band-gap region (position: 1.17 eV, width: 0.15 eV); therefore, it presumably originates from spatial quantum confinement effects of the carriers.

Keywords

elemental semiconductors; light emitting diodes; nanostructured materials; pulsed laser deposition; silicon; 1.17 eV; Si; ULSI technology; active material; laser ablation; monodispersed nanocrystallite silicon; near-infrared-light-emitting diode; quantum confinement; size classification; Control system synthesis; Gas lasers; Helium; Laser ablation; Light emitting diodes; Nanostructured materials; Optical materials; Programmable logic arrays; Silicon; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979460

Filename

979460