DocumentCode
2164943
Title
Complex permittivity measurements of dielectrics and semiconductors at millimeter waves with high power sources
Author
Afsar, Mohammed N. ; Korolev, Konstantin A. ; Subramanian, Lakshmi ; Tkachov, Igor I.
Author_Institution
Dept. of Electr. & Comput. Eng., Tufts Univ., Medford, MA, USA
fYear
2005
fDate
12-17 June 2005
Abstract
We present complex dielectric permittivity measurements of various semiconductor and dielectric materials, including highly absorbing substances, in Q-, V- and W-band frequencies. The measurements have been done using broadband quasioptical millimeter wave system with a backward-wave oscillator as a high power source of radiation. Frequency dependencies of real and imaginary parts of dielectric permittivity are calculated from the transmittance spectra. Complex dielectric permittivity data, obtained using both waveguide bridge technique and free space measurements have been compared with previously published results.
Keywords
backward wave oscillators; dielectric materials; millimetre wave measurement; permittivity measurement; semiconductor materials; Q-band frequency; V-band frequency; W-band frequency; backward-wave oscillators; broadband quasioptical millimeter wave system; complex dielectric permittivity measurement; dielectric materials; free space measurements; high absorbing substances; high power radiation source; millimeter wave measurement; semiconductor materials; transmittance spectra; waveguide bridge technique; Bridges; Dielectric materials; Dielectric measurements; Extraterrestrial measurements; Frequency; Millimeter wave measurements; Millimeter wave technology; Oscillators; Permittivity measurement; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN
01490-645X
Print_ISBN
0-7803-8845-3
Type
conf
DOI
10.1109/MWSYM.2005.1517156
Filename
1517156
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