DocumentCode
2164956
Title
Field emitter arrays for low voltage applications with sub 100 nm apertures and 200 nm period
Author
Pflug, D.G. ; Schattenburg, M. ; Smith, H.I. ; Akinwande, A.I.
Author_Institution
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Fabricated 70-nm-gate aperture silicon FEAs with turn-on voltages as low as 10 V. We demonstrated emission currents of 1 /spl mu/A at V/sub g/ of 13 V. Transmission electron microscopy (TEM) of the tips verified that the tip radii have a log-normal distribution with a mean radius of 4.5 nm. The measured tip radii are consistent with the electrical characterization of the devices.
Keywords
elemental semiconductors; low-power electronics; silicon; transmission electron microscopy; vacuum microelectronics; 1 muA; 10 V; 4.5 nm; 70 nm; Si; TEM; electrical characterization; emission currents; field emitter arrays; log-normal distribution; low voltage applications; tip radii; turn-on voltages; Apertures; Electron emission; Field emitter arrays; Geometry; Interferometric lithography; Laboratories; Low voltage; Mathematical model; Silicon; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979461
Filename
979461
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