Title :
Field emitter arrays for low voltage applications with sub 100 nm apertures and 200 nm period
Author :
Pflug, D.G. ; Schattenburg, M. ; Smith, H.I. ; Akinwande, A.I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Fabricated 70-nm-gate aperture silicon FEAs with turn-on voltages as low as 10 V. We demonstrated emission currents of 1 /spl mu/A at V/sub g/ of 13 V. Transmission electron microscopy (TEM) of the tips verified that the tip radii have a log-normal distribution with a mean radius of 4.5 nm. The measured tip radii are consistent with the electrical characterization of the devices.
Keywords :
elemental semiconductors; low-power electronics; silicon; transmission electron microscopy; vacuum microelectronics; 1 muA; 10 V; 4.5 nm; 70 nm; Si; TEM; electrical characterization; emission currents; field emitter arrays; log-normal distribution; low voltage applications; tip radii; turn-on voltages; Apertures; Electron emission; Field emitter arrays; Geometry; Interferometric lithography; Laboratories; Low voltage; Mathematical model; Silicon; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979461
