DocumentCode :
2164960
Title :
Constant field stressing of via-to-line spacing for accurate projection of intrinsic TDDB lifetime
Author :
Kamoshima, Takao ; Makabe, Kazuya ; Amishiro, Masatsugu ; Furusawa, Takeshi ; Takata, Yoshifumi ; Ogasawara, Makoto
Author_Institution :
Renesas Technol. Corp., Hitachi
fYear :
2009
fDate :
1-3 June 2009
Firstpage :
185
Lastpage :
187
Abstract :
We proposed solutions for determining the accurate projection of the TDDB lifetime of via-to-line spacing; that is, using a single-via test structure and constant field stress. This method eliminates the lifetime variations due to the spacing variations more effectively than conventional methods, for example, area scaling. The projected lifetime under the given use conditions increased at least about two-orders of magnitude by using this method, showing that constant field stress can be used to effectively project intrinsic TDDB lifetimes.
Keywords :
electric breakdown; constant field stress; constant field stressing; intrinsic TDDB lifetime; intrinsic TDDB lifetimes; time dependent dielectric breakdown; via-to-line spacing; Dielectric breakdown; Dielectric measurements; Extrapolation; Extraterrestrial measurements; Life testing; Semiconductor device measurement; Shape; Space technology; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
Type :
conf
DOI :
10.1109/IITC.2009.5090383
Filename :
5090383
Link To Document :
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