Title :
Simultaneous conduction band and valence band electron field emissions from n-type and p-type silicon field emitter arrays
Author :
Meng Ding ; Akinwande, A.I.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
We report field emission of electrons from both n-type and p-type silicon field emitter arrays. A two-band field emission model is proposed to explain the observed current voltage characteristics. Three emission regions were observed on the Fowler-Nordheim plots of all devices: conduction band emission at low gate voltages, conduction band emission with current saturation at medium voltages, and simultaneous conduction and valence band emissions at high gate voltages. Experimental data agree with the two-band field emission model.
Keywords :
conduction bands; electron field emission; elemental semiconductors; silicon; vacuum microelectronics; valence bands; Fowler-Nordheirn plot; Si; conduction band; current voltage characteristics; electron field emission; n-type silicon field emitter array; p-type silicon field emitter array; two-band model; valence band; Current-voltage characteristics; Electron emission; Electron sources; Field emitter arrays; Impact ionization; Laboratories; Medium voltage; Optical arrays; Sea surface; Silicon;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979462
