Title :
Suppression of drain conductance dispersion in InP-based HEMTs for broadband optical communication systems
Author :
Okamoto, N. ; Takahashi, T. ; Imanishi, K. ; Sawada, K. ; Hara, N.
Author_Institution :
Fujitsu Labs. Ltd., Kanagawa, Japan
Abstract :
Demonstrated InP-based HEMTs without drain conductance (g/sub d/) frequency dispersion for broadband optical communication systems. It was possible to markedly suppress the g/sub d/ dispersion by using composite channel and double-doped structures rather than a conventional HEMT structure. Furthermore, we clarified that hole generation time by impact ionization determines the frequency range of the g/sub d/ dispersion in a conventional InP-based HEMT by investigating the g/sub d/ dispersion over a wide range of frequencies (100 Hz-20 GHz).
Keywords :
HEMT integrated circuits; III-V semiconductors; broadband networks; impact ionisation; indium compounds; optical communication equipment; 100 Hz to 20 GHz; HEMTs; III V semiconductors; InP; broadband optical communication systems; composite channel structures; double-doped structures; drain conductance frequency dispersion; hole generation time; impact ionization; stable broadband ICs; Broadband communication; Dielectric substrates; Epitaxial layers; Frequency; HEMTs; Impact ionization; Indium gallium arsenide; MODFETs; Optical fiber communication; Voltage;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979463
