Title :
Electrical degradation of InAlAs/InGaAs metamorphic high-electron mobility transistors
Author :
Mertens, S.D. ; Del Alamo, J.A.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
We have studied the electrical degradation of InAlAs/InGaAs Metamorphic HEMTs. The main effect of the application of a bias for an extended period of time is a severe increase in the drain resistance, R/sub D/, of the device. We have identified two different degradation modes: a reduction in the sheet-electron concentration of the extrinsic drain and an increase of the drain contact resistance. Both mechanisms are found to be directly related to impact-ionization. The metamorphic nature of the substrate does not seem to play a role in the observed degradation.
Keywords :
III-V semiconductors; aluminium compounds; electron density; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; InAlAs-InGaAs; InAlAs/InGaAs metamorphic high electron mobility transistor; drain contact resistance; drain resistance; electrical degradation; impact ionization; sheet electron concentration; Degradation; Electric resistance; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Stress; Temperature; Threshold voltage; mHEMTs;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979464
