Title :
Deposition behavior and diffusion barrier property of CVD MnOx
Author :
Matsumoto, K. ; Neishi, K. ; Itoh, H. ; Sato, H. ; Hosaka, S. ; Koike, J.
Author_Institution :
Technol. Dev. Center, Tokyo Electron Ltd., Nirasaki
Abstract :
Chemical vapor deposition of MnOx (CVD-MnOx) was performed on blanket substrates as well as patterned interconnect structures. A conformal layer of MnOx was formed by the MnOx on SiO2 within a contact hole with a uniform thickness of 3 to 4 nm. Excellent diffusion barrier property was obtained after annealing at 400 degC. In contrast, the CVD-MnOx on Cu formed solid solution with Cu. The solute Mn was migrated towards the interface of Cu/SiO2 to form MnOx.
Keywords :
ULSI; annealing; chemical vapour deposition; copper; diffusion barriers; electrical contacts; integrated circuit interconnections; manganese compounds; silicon compounds; MnOx-Cu; MnOx-SiO2; annealing; blanket substrates; chemical vapor deposition; contact hole; diffusion barrier; patterned interconnect structures; size 3 nm to 4 nm; temperature 400 degC; ultralarge scale integrated circuits; Annealing; Chemical vapor deposition; Electrons; Integrated circuit interconnections; Manganese; Materials science and technology; Sputtering; Substrates; Temperature; Ultra large scale integration;
Conference_Titel :
Interconnect Technology Conference, 2009. IITC 2009. IEEE International
Conference_Location :
Sapporo, Hokkaido
Print_ISBN :
978-1-4244-4492-2
Electronic_ISBN :
978-1-4244-4493-9
DOI :
10.1109/IITC.2009.5090386
