Metallization of sub-30 nm interconnects: Comparison of different liner/seed combinations

Author

Carbonell, Laureen ; Volders, Henny ; Heylen, Nancy ; Kellens, Kristof ; Caluwaerts, Rudy ; Devriendt, Katia ; Sanchez, Efraín Altamirano ; Wouters, Johan ; Gravey, Virginie ; Shah, Kavita ; Luo, Qian ; Sundarrajan, Arvind ; Lu, Jiang ; Aubuchon, Joseph ;

Author_Institution

IMEC vzw, Leuven

fYear

2009

fDate

1-3 June 2009

Firstpage

200

Lastpage

202

Abstract

Narrow trenches with Critical Dimensions down to 17 nm were patterned in oxide using a sacrificial FIN approach and used to evaluate the scalability of TaN/Ta, RuTa, TaN + Co and MnOx metallization schemes. So far, the RuTa metallization scheme has proved to be the most promising candidate to achieve a successful metallization of 25 nm interconnects, providing high electrical yields and a good compatibility with the slurries used during CMP.

Keywords

chemical mechanical polishing; cobalt; integrated circuit interconnections; integrated circuit metallisation; manganese compounds; ruthenium alloys; tantalum; tantalum alloys; tantalum compounds; CMP; MnO_x; RuTa; TaN-Co; TaN-Ta; critical dimensions; electrical yields; interconnects; metallization; narrow trenches; sacrificial FIN approach; scalability; size 25 nm; slurries; Copper; Etching; Geometry; Inorganic materials; Lithography; Manufacturing; Metallization; Organic materials; Scalability; Slurries;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2009. IITC 2009. IEEE International

Conference_Location

Sapporo, Hokkaido

Print_ISBN

978-1-4244-4492-2

Electronic_ISBN

978-1-4244-4493-9

Type

conf

DOI

10.1109/IITC.2009.5090387

Filename

5090387