Title :
Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates
Author :
O´Riordan, A. ; Dwane, K. ; Redmond, G.
Author_Institution :
Nanotechnology Group, Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650 nm emission GaAs based LEDs at silicon substrates is demonstrated.
Keywords :
III-V semiconductors; electrophoresis; gallium arsenide; light emitting diodes; 50 micron; 650 nm; 80 micron; DC electric field; GaAs; GaAs LED; Si; field assisted transport; heterogeneous integration; nonaqueous solvent; optoelectronic device; programmed electrophoretic assembly; silicon substrate; site-selective localization; Assembly; Circuits; Electrodes; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Silicon; Solvents; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7050-3
DOI :
10.1109/IEDM.2001.979466
