DocumentCode
2165082
Title
Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates
Author
O´Riordan, A. ; Dwane, K. ; Redmond, G.
Author_Institution
Nanotechnology Group, Nat. Microelectron. Res. Centre, Cork, Ireland
fYear
2001
fDate
2-5 Dec. 2001
Abstract
A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650 nm emission GaAs based LEDs at silicon substrates is demonstrated.
Keywords
III-V semiconductors; electrophoresis; gallium arsenide; light emitting diodes; 50 micron; 650 nm; 80 micron; DC electric field; GaAs; GaAs LED; Si; field assisted transport; heterogeneous integration; nonaqueous solvent; optoelectronic device; programmed electrophoretic assembly; silicon substrate; site-selective localization; Assembly; Circuits; Electrodes; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Silicon; Solvents; Substrates; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979466
Filename
979466
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